Semiconductor Crystals And Substrates

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Semiconductor Crystals And Substrates

We provide Semiconductor wafers and crystals from the top high quality vendors. They are the indispensable materials for today’s civilization that drives almost all technologies to make the life easier the life for human being. LEDs, Laser diodes, detectors, sensors, transistors and Integrated Circuits, solar cells and many other semiconductor, thin film and MEMS devices are uses these substrates as a base material. There are many semicondcutor crystal growth method that helps to make those devices for our lives. Czochralski Pullers, MOCVD, MBE, HVPE, LPE, Float Zone, VGF and some other well known methods and tools are well developed to make such crystals and well established processing methods are available to make thin slice of those crystals so called wafers. From almost zero bandgap energy to high bandgap up to 6.2eV wafer materials are giving us wide spectrum of application area.

Semiconductor Wafers Portfolio

Click on the below items to see major product properties!

Contact sales@corecrystal.com for detailed technical properties of the substrate products.

SiC – Silicon Carbide Wafer

Polytype: 4H,6H
Diameter: 2″,3″,4″,6″
Conductivity: N-type, Semi Insulating
Surface Finish: Epi-Ready, Optical Polish, Fine ground, Single Side Polished, Double Side Polished

Al2O3 – Sapphire Wafer

Surface Orientation: C-plane, R-plane, A-Plane
Diameter: 2″,3″,4″,6″
Conductivity: N-type, Semi Insulating
Surface Finish: PSS, Epi-Ready, Optical Polish, Fine ground, Single Side Polished, Double Side Polished

GaAs – Gallium Arsenide Wafer

Surface Orientation: (100)
Diameter: 2″,3″,4″,5″,6″
Conductivity: N-type, P-type, Undoped
Surface Finish: Epi-Ready,Etched, Single Side Polished, Double Side Polished

InP – Indium Phosphide Wafer

Surface Orientation: (100)
Diameter: 2″,3″,4″,6″
Conductivity: N-type, P-type, Semi Insulating
Surface Finish: Epi-Ready, Etched, Single Side Polished, Double Side Polished

Ge – Germanium Wafer

Surface Orientation: (100)
Diameter: 2″,3″,4″,6″
Conductivity: N-type, P-type
Surface Finish: Epi-Ready, Etched, Single Side Polished, Double Side Polished

GaP – Gallium Phosphide Wafer

Surface Orientation: (100), (111)
Diameter: 2″,3″
Conductivity: N-type, P-type, Semi Insulating
Surface Finish: Single Side Polished, Double Side Polished

Si – Silicon Wafer

Surface Orientation: (100), (111), (110)
Diameter: 2″,3″,4″,6″,8″
Conductivity: N-type, P-type, Semi Insulating
Surface Finish: Single Side Polished, Double Side Polished

SOI – Silicon on Insulator Wafer

Handle Thickness: 0.2-1.1mm
Diameter: 4″,5″,6″,8″
Handle Conductivity: N-type, P-type
Buried Oxide: 0.2µm to 15µm
Device Layer: 0.1µm to 200µm
Backside Surface: Lapped/Etched or Polished

TOX – Thermal Oxide Layer on Si Wafer

Substrate: p type Silicon <100>
Diameter: 150mm
Thickness: 1000µm
Thermal Oxide: 0.2µm to 20µm

GaN – Gallium Nitride Wafer

Free Standing GaN
Surface Orientation: <001> C-Plane
Diameter: 2″ (50mm), 4″ (100mm)
Thickness: 350µm (2″), 480µm (4″)
Conductivity: N-type, Undoped
Surface Finish: Epi-Ready, Fine ground
FWHM: < 120 arc sec

AlN – Aluminium Nitride Wafer

Free Standing AlN
Surface Orientation: <001> C-Plane
Diameter: 1″, 2″,3″, 4″ OR Customized Sizes
Thickness: 400µm to 1000µm
Conductivity: N-type, Undoped
Surface Finish: Epi-ready, SSP, DSP

CZT – Cadmium Zinc Telluride Wafer

Free Standing CZT
Surface Orientation: <111>
Size: 25mm x 25mm
Thickness: 1200µm
Zn: %3.5<x<%4.5
Surface Finish: Epi-ready

Contact Us

We will be happy to help you for your standart and customized semiconductor wafer needs. Contact our Expert for your research and production aiming semiconductor wafer needs.

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13.10.2021
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