Group III Arsenide based semiconductors are very important materials of today’s electronic and opto-electronic technology. Including IR Lasers and Photodetectors and high frequency devices many semicondcutor devices are made of such Arsenide semiconductor materials via several methods like MOCVD, MBE.
- AlGaInP LED Wafers- 630nm
- InGaAs/GaAsP IR-LED Wafers – 940nm
- AlGaInP Laser Diode Wafer – 808nm
- InGaAs Laser Diode Wafer- 940nm
- InGaAs Laser Diode Wafer – 976nm
- InGaAs Laser Diode Wafer – 1060nm
- AlGaAs VCSEL Epi Wafer – 808nm
- InGaAsP/InGaAs Laser Diode Wafer – 1550nm
- Ge/GaAs/GaInp TJ Solar Cell Wafers
- LT-GaAs on GaAs Wafers
- InGaAs IR Photodetector Wafers
- GaInP/InP HEMT, HBT Wafers
Besides the standart Epitaxial wafers for various Semicondcutor devices, we are able to provide you customized Epitaxial wafer solutions with below listed layers and combination of those.
- GaAs – Gallium Arsenide
- AlAs – Aluminium Arsenide
- AlGaAs – Aluminium Gallium Arsenide
- InAs – Indium Arsenide
- InGaAs – Indium Gallium Arsenide
- AlInAs – Aluminium Indium Arsenide
- AlGaInAs – Aluminium Gallium Indium Arsenide
- GaP – Gallium Phosphide
- AlGaP – Aluminium Gallium Phosphide
- InP – Indium Phosphide
- InGaP – Indium Gallium Phosphide
- AlInP – Aluminium Indium Phosphide
- AlGaInP – Aluminium Gallium Indium Phosphide
- GaInAsP – Gallium Indium Arsenide Phosphide
We will be happy to work on your customized GaAs related Epitaxial wafers consisting of single layer or multilayer complex structures. You may also see our standart Epitaxial wafer products in the below list which may fit to your project requirements. Check our the below GaAs based product list and contact us for Quote Request!
Ask UsContact our Epitaxy Expert for your research and production aiming Epitaxial wafer needs. We will be happy to assist you.
